Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou*, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

Original languageEnglish
Article number121801
JournalJapanese journal of applied physics
Volume50
Issue number12
DOIs
StatePublished - 1 Dec 2011

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