Uniform CoSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer

Juin Jie Chang, Tsung-Eong Hsien, Chuan Pu Liu, Ying Lang Wang*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.

Original languageEnglish
Pages (from-to)85-89
Number of pages5
JournalThin Solid Films
Volume498
Issue number1-2
DOIs
StatePublished - 1 Mar 2006
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 12 Nov 200414 Nov 2004

Keywords

  • Annealing
  • Cobalt silicide
  • Nucleus
  • Oxide mediated epitaxy

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