The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.
|Number of pages||5|
|Journal||Thin Solid Films|
|State||Published - 1 Mar 2006|
|Event||Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD - |
Duration: 12 Nov 2004 → 14 Nov 2004
- Cobalt silicide
- Oxide mediated epitaxy