Unified compact model for gate all around fets-nanosheets, nanowires, multi bridge channel MOSFETs

P. Kushwaha, J. P. Duarte, Y. K. Lin, H. Agarwal, H. L. Chang, A. Sachid, Y. S. Chauhan, S. Salahuddin, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A unified compact model for gate-all-around (GAA) FETs is discussed. This single unified model can accurately model different shapes of GAA FETs. In this work, we present its validation with the reported GAA FETs: stacked GAA nanosheet, stacked nanowire MOS-FETs, Multi-bridge-channel MOSFETs and Twin silicon nanowire MOSFETs. This study shows that the BSIM-CMG unified multi-gate MOSFET model is ready for production design of silicon GAA based circuits and technology-product co-development for future technology nodes.

Original languageEnglish
Title of host publicationTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
EditorsMatthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
PublisherTechConnect
Pages249-252
Number of pages4
ISBN (Electronic)9780998878256
StatePublished - 1 Jan 2018
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
Duration: 13 May 201816 May 2018

Publication series

NameTechConnect Briefs 2018 - Advanced Materials
Volume4

Conference

Conference11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
CountryUnited States
CityAnaheim
Period13/05/1816/05/18

Keywords

  • BSIM-CMG
  • Compact model
  • GAA
  • Nanosheet
  • Nanowire

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  • Cite this

    Kushwaha, P., Duarte, J. P., Lin, Y. K., Agarwal, H., Chang, H. L., Sachid, A., Chauhan, Y. S., Salahuddin, S., & Hu, C-M. (2018). Unified compact model for gate all around fets-nanosheets, nanowires, multi bridge channel MOSFETs. In M. Laudon, F. Case, B. Romanowicz, & F. Case (Eds.), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (pp. 249-252). (TechConnect Briefs 2018 - Advanced Materials; Vol. 4). TechConnect.