Unified compact model covering drift-diffusion to ballistic carrier transport

Sourabh Khandelwal*, Harshit Agarwal, Pragya Kushwaha, Juan Pablo Duarte, Aditya Medury, Yogesh S. Chauhan, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs.

Original languageEnglish
Article number7352335
Pages (from-to)134-137
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number2
DOIs
StatePublished - 1 Feb 2016

Keywords

  • Ballistic transport
  • BSIM-CMG
  • BSIM-IMG
  • BSIM6 Unified Compact Model
  • Source injection velocity limit

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