A Unified 3-D Mobility Model For The Simulation Of Submicron Mos Devices

Jiuun Jer Yang*, Steve S. Chung, Chien Hwa Chang, Giahn Horng Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A calibrated and physically based mobility model is developed for three-dimensional simulation of submicron metal-oxide-semiconductor (MOS) devices, in which the inversion layer mobility is emphasized. This inversion layer mobility can be generalized into a local form, i.e., expressed as functions of the local electric field at each grid point, so that it is well suited for device simulation. The resulting 3d mobility model accurately characterizes the significant physical scattering effects including the Coulomb screening effect, quantum channel broadening effect, surface roughness scattering, structure-induced lateral surface scattering and velocity saturation limited effects. Results show that this new model can be incorporated into device simulators for accurately predicting drain currents of submicron LDD MOS devices. Moreover, the results compare more favorably with the experimental data than do those for other reported models.

Original languageEnglish
Pages (from-to)1583-1589
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 R
StatePublished - 1 Apr 1993


  • Device simulation
  • Mobility model
  • Submicron LDD MOS devices

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