Uniaxial-biaxial stress hybridization for super-critical strained-Si directly on insulator (SC-SSOI) PMOS with different channel orientations

A. V.Y. Thean*, L. Prabhu, V. Vartanian, M. Ramon, B. Y. Nguyen, T. White, H. Collard, Q. H. Xie, S. Murphy, J. Cheek, S. Venkatesan, J. Mogab, C. H. Chang, Y. H. Chiu, H. C. Tuan, Y. C. See, M. S. Liang, Y. C. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

This paper describes the novel stress engineering of SC-SSOI devices through the interactions between biaxial lattice strain, uniaxial relaxation, process-induced Stressor and channel orientation. We have demonstrated a method of uniaxial stress relaxation with compressive capping layer (cESL) to achieve the desired stress configurations for enhanced short-channel SC-SSOI pMOS devices.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages509-512
Number of pages4
StatePublished - 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 5 Dec 20057 Dec 2005

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period5/12/057/12/05

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