Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic inxGa 1-xP buffered GaAs substrate

Yu Sheng Liao, Gong Ru Lin*, Hao-Chung Kuo, Milton Feng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes, with the partially p-doped photoabsorption layer, grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4⊕10-15 W/Hz1/2, and 8 GHz, respectively, at 1550 nm. Under the illumination of 1.2-ps pulse-train, the measured impulse response is 41 ps and the frequency bandwidth is up to 8 GHz with heterodyne beating measurement. The low cost InGaAs photodiode with high current bandwidth product (350 mA⊕GHz, at 10 GHz) and bandwidth-efficient product (4.8 GHz⊕A/W) have been achieved.

Original languageEnglish
Title of host publicationSemiconductor Photodetectors III
DOIs
StatePublished - 24 May 2006
EventSemiconductor Photodetectors III - San Jose, CA, United States
Duration: 25 Jan 200625 Jan 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6119
ISSN (Print)0277-786X

Conference

ConferenceSemiconductor Photodetectors III
CountryUnited States
CitySan Jose, CA
Period25/01/0625/01/06

Keywords

  • GaAs
  • High-power photodiode
  • IngaAs
  • InGaP
  • Metamorphic
  • P-i-n Photodiode
  • Receiver

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  • Cite this

    Liao, Y. S., Lin, G. R., Kuo, H-C., & Feng, M. (2006). Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic inxGa 1-xP buffered GaAs substrate. In Semiconductor Photodetectors III [61190L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6119). https://doi.org/10.1117/12.645859