Abstract
Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at Vd -1.5 V, and the drain current was 0.77 mA/μm. This gm value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.
Original language | English |
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Pages (from-to) | 710-716 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 45 |
Issue number | 3 |
DOIs | |
State | Published - 1998 |
Keywords
- Epitaxial si
- n-MOSFET
- Sub-O.l-μm gate