Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Tatsuya Ohguro*, Naoharu Sugiyama, Seiji Imai, Kouji Usuda, Masanobu Saito, Takashi Yoshitomi, Mizuki Ono, Hideki Kimijima, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at Vd -1.5 V, and the drain current was 0.77 mA/μm. This gm value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.

Original languageEnglish
Pages (from-to)710-716
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number3
StatePublished - 1998


  • Epitaxial si
  • n-MOSFET
  • Sub-O.l-μm gate

Fingerprint Dive into the research topics of 'Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating'. Together they form a unique fingerprint.

Cite this