Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Tatsuya Ohguro; Naoharu Sugiyama; Seiji Imai; Kouji Usuda; Masanobu Saito; Takashi Yoshitomi; Mizuki Ono; Hideki Kimijima; Hisayo Sasaki Momose; Yasuhiro Katsumata; Hiroshi Iwai

doi:10.1109/16.661232

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Tatsuya Ohguro^*, Naoharu Sugiyama, Seiji Imai, Kouji Usuda, Masanobu Saito, Takashi Yoshitomi, Mizuki Ono, Hideki Kimijima, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at V_d -1.5 V, and the drain current was 0.77 mA/μm. This g_m value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.

Original language	English
Pages (from-to)	710-716
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	3
DOIs	https://doi.org/10.1109/16.661232
State	Published - 1998

Keywords

Epitaxial si
n-MOSFET
Sub-O.l-μm gate

Access to Document

10.1109/16.661232

Fingerprint Dive into the research topics of 'Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating'. Together they form a unique fingerprint.

Cite this

@article{fd90aa959c6c40a8a1e6fe1bcd956caa,

title = "Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating",

abstract = "Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at Vd -1.5 V, and the drain current was 0.77 mA/μm. This gm value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.",

keywords = "Epitaxial si, n-MOSFET, Sub-O.l-μm gate",

author = "Tatsuya Ohguro and Naoharu Sugiyama and Seiji Imai and Kouji Usuda and Masanobu Saito and Takashi Yoshitomi and Mizuki Ono and Hideki Kimijima and Momose, {Hisayo Sasaki} and Yasuhiro Katsumata and Hiroshi Iwai",

year = "1998",

doi = "10.1109/16.661232",

language = "English",

volume = "45",

pages = "710--716",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "3",

}

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating. / Ohguro, Tatsuya; Sugiyama, Naoharu; Imai, Seiji; Usuda, Kouji; Saito, Masanobu; Yoshitomi, Takashi; Ono, Mizuki; Kimijima, Hideki; Momose, Hisayo Sasaki; Katsumata, Yasuhiro; Iwai, Hiroshi.

In: IEEE Transactions on Electron Devices, Vol. 45, No. 3, 1998, p. 710-716.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

AU - Ohguro, Tatsuya

AU - Sugiyama, Naoharu

AU - Imai, Seiji

AU - Usuda, Kouji

AU - Saito, Masanobu

AU - Yoshitomi, Takashi

AU - Ono, Mizuki

AU - Kimijima, Hideki

AU - Momose, Hisayo Sasaki

AU - Katsumata, Yasuhiro

AU - Iwai, Hiroshi

PY - 1998

Y1 - 1998

N2 - Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at Vd -1.5 V, and the drain current was 0.77 mA/μm. This gm value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.

AB - Undoped epitaxial channel n-MOSFET with high transconductance was developed. In order to obtain a good crystal quality of the epitaxial layer and, thus, to achieve high performance, it is important to reduce the oxygen concentration at the epitaxial Si/Si substrate interface. In this paper, we describe the relationship between the electrical characteristics and the surface density of oxygen at the epitaxial Si/Si substrate. We also describe the dependence of the electrical characteristics on epitaxial Si thickness. The gm of n-MOSFET with 40-nm epitaxial Si for 0.10-μm gate length was 630 mS/mm at Vd -1.5 V, and the drain current was 0.77 mA/μm. This gm value in the case of the epitaxial Si channel is about 20% larger than that of bulk the MOSFET. These results show that epitaxial Si channel MOSFET's are useful for future high-speed ULSI devices.

KW - Epitaxial si

KW - n-MOSFET

KW - Sub-O.l-μm gate

UR - http://www.scopus.com/inward/record.url?scp=0032022530&partnerID=8YFLogxK

U2 - 10.1109/16.661232

DO - 10.1109/16.661232

M3 - Article

AN - SCOPUS:0032022530

VL - 45

SP - 710

EP - 716

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 3

ER -

Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

Abstract

Keywords

Access to Document

Other files and links

Cite this