Understanding the Difference in Soft-Error Sensitivity of Back-Biased Thin-BOX SOI SRAMs to Space and Terrestrial Radiation

Chin Han Chung*, Daisuke Kobayashi, Kazuyuki Hirose

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High tolerance against soft errors is regarded as one of the advantages of silicon-on-insulator (SOI) technology, as well as the reduction in power consumption by applying a back-bias from under the buried oxide layer (BOX). These advantages are appealing to Internet-of-Things (IoT) and space applications. Recently, it was found in a heavy-ion experiment that a static random-access memory (SRAM) fabricated with a 65-nm thin-BOX SOI technology exhibited a 100-fold soft-error sensitivity when it received a back-bias. This was due to long line-type formations of multiple cell upsets (MCUs) caused by radiation-induced potential perturbation under the BOX. However, devices fabricated with a similar technology tested with terrestrial neutrons did not show such a phenomenon in another previous study. To understand this difference, in the present work, a resistance-based model is adopted. Prediction of device soft-error sensitivity due to line-type MCUs under different radiation environment are also made. Then, characteristics of secondary ions generated by terrestrial neutrons in silicon devices are studied using simulation.

Original languageEnglish
Article number8882369
Pages (from-to)751-756
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume19
Issue number4
DOIs
StatePublished - Dec 2019

Keywords

  • radiation effect
  • silicon-on-insulator
  • Soft error

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