Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention

C. H. Chen*, P. Y. Chiang, Steve S. Chung, Terry Chen, George C.W. Chou, C. H. Chu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

In this paper, the ONO layer scaling and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated, Results have shown that the cell with thinner blocking oxide has better endurance, while it has poorer data retention. However, this can be achieved by a good control of the oxide quality. In terms of the data retention, thermionic and direct tunneling, in relating to the charge loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we can separate another third leakage component, the trap-to-trap tunneling induced leakage. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling design of ONO layers.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages34-35
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 24 Apr 200626 Apr 2006

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period24/04/0626/04/06

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    Chen, C. H., Chiang, P. Y., Chung, S. S., Chen, T., Chou, G. C. W., & Chu, C. H. (2006). Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 34-35). [4016590] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251054