Ultraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunction

Jiangnan Dai*, Jingwen Chen, Xiaohang Li, Jun Zhang, Hanling Long, Hao-Chung Kuo, Yunbin He, Changqing Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO∕i-ZnO∕p-Al 0.1 Ga 0.9 N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum.

Original languageEnglish
Pages (from-to)1944-1947
Number of pages4
JournalOptics Letters
Volume44
Issue number8
DOIs
StatePublished - 15 Apr 2019

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