Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors

Chao Ching Cheng*, Chao-Hsin Chien, Guang Li Luo, Chun Hui Yang, Mei Ling Kuo, Je Hung Lin, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.

Original languageEnglish
Article number012905
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
StatePublished - 15 Jan 2007

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