The paper gives a short overview of Ox/Nitride gate stack prepared by Rapid Thermal Chemical Vapor Deposition (RTCVD) for sub-quarter-micron CMOS process. The main portion is focused on the unlike characteristics of different interfacial oxide in Ox/Nitride gate stack. Post deposition annealing is also investigated including NH3 and N2O treatment. Excellent improvements are available including lower gate leakage current, comparable driving current, suitable interface density of states and stable gate dielectric reliability.
|Number of pages||4|
|Journal||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|State||Published - Apr 2001|