Ultrathin N 2 O-oxide with atomically flat interfaces

Albert Chin*, W. J. Chen, B. C. Lin, J. H. Kao, C. Tsai, J. C.M. Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Silicon oxide has been grown in a low pressure furnace using N 2 O. An atomically flat SiO 2 (N 2 O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Å. The thickness variation of a 20 Å N 2 O-oxide, grown on a 4 in. substrate <1 Å. The excellent uniformity is attributed to the increased mean-free path of N 2 O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N 2 O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume144
Issue number5
DOIs
StatePublished - 1 Jan 1997

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