Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer

H. S. Momose*, T. Ohguro, E. Morifuji, H. Sugaya, S. I. Nakamura, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The nondoped selective epitaxial Si channel technique has been applied to ultrathin gate oxide CMOS transistors. It was confirmed that drain current drive and transconductance are improved in the epitaxial channel MOSFETs with ultrathin gate oxides in the direct-tunneling regime. It was also found that the epitaxial Si channel noticeably reduces the direct-tunneling gate leakage current. The relation between channel impurity concentration and direct-tunneling gate leakage current was investigated in detail. It was confirmed that the lower leakage current in epitaxial channel devices was not completely explained by the lower impurity concentration at the channel. The results suggest that the improved leakage current in the epitaxial channel case is attributable to the improvement of some aspect of the oxide film quality, such as roughness or defect density, and that the improvement of the oxide film quality is essential for ultrathin gate oxide CMOS. AFM and 1/f noise results support that SiO2/Si interface quality in epitaxial Si channel MOSFETs improved. Good performance and lower leakage current of TiN gate electrode CMOS was also demonstrated.

Original languageEnglish
Pages (from-to)1136-1144
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume48
Issue number6
DOIs
StatePublished - Jun 2001

Keywords

  • Channel profile
  • Direct-tunneling
  • Epitaxial silicon growth
  • Gate leakage current
  • Gate oxide
  • Metal gate

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