Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes

Ta Ya Chu*, Szu Yi Chen, Jenn-Fang Chen, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indiumtin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq 3/NPB/WO3/Al was 4.2V and an efficiencies of 4.66 cd/A and 1.51 Im/W were achieved at an operational voltage of 8.9V and a brightness of 940cd/m2. In comparison with an ITO/Alq3 bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8V in voltage was obtained at 1 mA/cm2. A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.

Original languageEnglish
Pages (from-to)4948-4950
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number6 A
DOIs
StatePublished - 28 Jun 2006

Keywords

  • Electron injection
  • Indium tin oxide (ITO)
  • Inverted organic light emitting device (IOLED)

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