Abstract
A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.
Original language | English |
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Pages (from-to) | 254-255 |
Number of pages | 2 |
Journal | IEEE Electron Device Letters |
Volume | 21 |
Issue number | 5 |
DOIs | |
State | Published - 1 May 2000 |