Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi, Kazuya Asano, Nick Lindert, Vivek Subramanian, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

174 Scopus citations


A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.

Original languageEnglish
Pages (from-to)254-255
Number of pages2
JournalIEEE Electron Device Letters
Issue number5
StatePublished - 1 May 2000

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