Ultrathin body InAs tunneling field-effect transistors on Si substrates

Alexandra C. Ford; Chun Wing Yeung; Steven Chuang; Ha Sul Kim; Elena Plis; Sanjay Krishna; Chen-Ming Hu; Ali Javey

doi:10.1063/1.3567021

Ultrathin body InAs tunneling field-effect transistors on Si substrates

Alexandra C. Ford, Chun Wing Yeung, Steven Chuang, Ha Sul Kim, Elena Plis, Sanjay Krishna, Chen-Ming Hu, Ali Javey^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article

66 Scopus citations

Abstract

An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors.

Original language	English
Article number	113105
Journal	Applied Physics Letters
Volume	98
Issue number	11
DOIs	https://doi.org/10.1063/1.3567021
State	Published - 14 Mar 2011

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Ford, A. C., Yeung, C. W., Chuang, S., Kim, H. S., Plis, E., Krishna, S., Hu, C-M., & Javey, A. (2011). Ultrathin body InAs tunneling field-effect transistors on Si substrates. Applied Physics Letters, 98(11), [113105]. https://doi.org/10.1063/1.3567021

@article{6e6b05beb545495daace7f63d5ccedf3,

title = "Ultrathin body InAs tunneling field-effect transistors on Si substrates",

abstract = "An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors.",

author = "Ford, {Alexandra C.} and Yeung, {Chun Wing} and Steven Chuang and Kim, {Ha Sul} and Elena Plis and Sanjay Krishna and Chen-Ming Hu and Ali Javey",

year = "2011",

month = mar,

day = "14",

doi = "10.1063/1.3567021",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Ultrathin body InAs tunneling field-effect transistors on Si substrates

AU - Ford, Alexandra C.

AU - Yeung, Chun Wing

AU - Chuang, Steven

AU - Kim, Ha Sul

AU - Plis, Elena

AU - Krishna, Sanjay

AU - Hu, Chen-Ming

AU - Javey, Ali

PY - 2011/3/14

Y1 - 2011/3/14

N2 - An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors.

AB - An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors.

UR - http://www.scopus.com/inward/record.url?scp=79952947248&partnerID=8YFLogxK

U2 - 10.1063/1.3567021

DO - 10.1063/1.3567021

M3 - Article

AN - SCOPUS:79952947248

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113105

ER -