Ultrathin body InAs tunneling field-effect transistors on Si substrates

Alexandra C. Ford, Chun Wing Yeung, Steven Chuang, Ha Sul Kim, Elena Plis, Sanjay Krishna, Chen-Ming Hu, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach is used for the formation of a p+ source contact which minimizes lattice damage to the ultrathin body InAs compared to ion implantation. The transistor exhibits gated negative differential resistance behavior under forward bias, confirming the tunneling operation of the device. In this device architecture, the ON current is dominated by vertical band-to-band tunneling and is thereby less sensitive to the junction abruptness. The work presents a device and materials platform for exploring III-V tunnel transistors.

Original languageEnglish
Article number113105
JournalApplied Physics Letters
Volume98
Issue number11
DOIs
StatePublished - 14 Mar 2011

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    Ford, A. C., Yeung, C. W., Chuang, S., Kim, H. S., Plis, E., Krishna, S., Hu, C-M., & Javey, A. (2011). Ultrathin body InAs tunneling field-effect transistors on Si substrates. Applied Physics Letters, 98(11), [113105]. https://doi.org/10.1063/1.3567021