Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor

Chih Heng Lin, Cheng Yun Hsiao, Cheng Hsiung Hung, Yen Ren Lo, Cheng Che Lee, Chun Jung Su, Horng-Chih Lin, Fu-Hsiang Ko, Tiao Yuan Huang, Yuh-Shyong Yang*

*Corresponding author for this work

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

An unprecedented high sensitive sensing of neurotransmitter dopamine at fM level was demonstrated using a poly-crystalline silicon nanowire field-effect transistor (poly-SiNW FET) fabricated by employing a simple and low-cost poly-Si sidewall spacer technique, which was compatible with current commercial semiconductor processes for large-scale standard manufacture.

Original languageEnglish
Pages (from-to)5749-5751
Number of pages3
JournalChemical Communications
Issue number44
DOIs
StatePublished - 24 Nov 2008

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