Ultralow leakage In 0.53 Ga 0.47 As p-i-n photodetector grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate

Gong Ru Lin; Hao-Chung Kuo; Chi Kuan Lin; Milton Feng

doi:10.1109/JQE.2005.847570

Ultralow leakage In _0.53 Ga _0.47 As p-i-n photodetector grown on linearly graded metamorphic In _x Ga _1-x P buffered GaAs substrate

Gong Ru Lin^*, Hao-Chung Kuo, Chi Kuan Lin, Milton Feng

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

A novel top-illuminated In _0.53 Ga _0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In _x Ga _1-x P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10 ^-15 W/Hz ^1/2 , and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.

Original language	English
Pages (from-to)	749-752
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/JQE.2005.847570
State	Published - 1 Jun 2005

Keywords

GaAs
In Ga As
InGaP
Metamorphic
P-i-n photodetector

Access to Document

10.1109/JQE.2005.847570

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Ultralow leakage In 0.53 Ga 0.47 As p-i-n photodetector grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate'. Together they form a unique fingerprint.

Cite this

@article{f62125d52e374e2ca11655c92b60f7d2,

title = "Ultralow leakage In 0.53 Ga 0.47 As p-i-n photodetector grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate",

abstract = " A novel top-illuminated In 0.53 Ga 0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In x Ga 1-x P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10 -15 W/Hz 1/2 , and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.",

keywords = "GaAs, In Ga As, InGaP, Metamorphic, P-i-n photodetector",

author = "Lin, {Gong Ru} and Hao-Chung Kuo and Lin, {Chi Kuan} and Milton Feng",

year = "2005",

month = jun,

day = "1",

doi = "10.1109/JQE.2005.847570",

language = "English",

volume = "41",

pages = "749--752",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Ultralow leakage In 0.53 Ga 0.47 As p-i-n photodetector grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate

AU - Lin, Gong Ru

AU - Kuo, Hao-Chung

AU - Lin, Chi Kuan

AU - Feng, Milton

PY - 2005/6/1

Y1 - 2005/6/1

N2 - A novel top-illuminated In 0.53 Ga 0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In x Ga 1-x P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10 -15 W/Hz 1/2 , and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.

AB - A novel top-illuminated In 0.53 Ga 0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In x Ga 1-x P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4 × 10 -15 W/Hz 1/2 , and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.

KW - GaAs

KW - In Ga As

KW - InGaP

KW - Metamorphic

KW - P-i-n photodetector

UR - http://www.scopus.com/inward/record.url?scp=20544445461&partnerID=8YFLogxK

U2 - 10.1109/JQE.2005.847570

DO - 10.1109/JQE.2005.847570

M3 - Article

AN - SCOPUS:20544445461

VL - 41

SP - 749

EP - 752

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 6

ER -