Ultrahigh sensitivity self-amplification phototransistor achieved by automatic energy band lowering behavior

Hua Mao Chen, Ting Chang Chang, Ya-Hsiang Tai, Yu Chun Chen, Man Chun Yang, Cheng Hsu Chou, Jung Fang Chang, Shao Zhi Deng

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this paper, amorphous InGaZnO 4 thin-film transistors with an asymmetric structure exhibit ultraviolet (UV) light sensing property. At the offset region near the drain electrode, the extended active layer plays the role of a resistor. However, the ON-state current is obviously reduced with increasing offset length at the offset region near the source electrode and the characteristics cannot be turned ON when offset length is over 4 μ m. After exposure to UV light, photogenerated holes-induce source barrier lowering and then amplifying the photocurrent response. Therefore, the devices in this paper reach a high-ON/OFF ratio of UV sensitivity to (10 6 .

Original languageEnglish
Article number6867311
Pages (from-to)3186-3190
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume61
Issue number9
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Amorphous InGaZnO (a-InGaZnO)
  • thin-film transistors (TFTs)
  • ultraviolet (UV) sensor

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    Chen, H. M., Chang, T. C., Tai, Y-H., Chen, Y. C., Yang, M. C., Chou, C. H., Chang, J. F., & Deng, S. Z. (2014). Ultrahigh sensitivity self-amplification phototransistor achieved by automatic energy band lowering behavior. IEEE Transactions on Electron Devices, 61(9), 3186-3190. [6867311]. https://doi.org/10.1109/TED.2014.2336235