Ultrafast nonlinear optics due to electron-hole plasma in bulk semiconductors

Hsin-Fei Meng*, Chih Ming Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

It is theoretically demonstrated that, in the presence of an electric potential landscape, the ground-state energy of the electron-hole plasma can be substantially lowered against the ground-state energy of the excitons. The electron-hole plasma is found to be unstable at lower carrier densities. The critical carrier density for the transition between these two states can be reduced. This reduction provides a new mechanism of nonlinear optics for bulk direct band-gap semiconductors, with picosecond relaxation time, large nonlinearity, and requiring low pump intensity.

Original languageEnglish
Pages (from-to)76-82
Number of pages7
JournalPhysica B: Condensed Matter
Volume240
Issue number1-2
DOIs
StatePublished - 1 Sep 1997

Keywords

  • Electron-hole plasma
  • Semi conductors

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