Ultra-thin silicon dioxide leakage current and scaling limit

K. F. Schucgrqf; C. C. Kin; C. Hu

doi:10.1109/VLSIT.1992.200622

Ultra-thin silicon dioxide leakage current and scaling limit

K. F. Schucgrqf, C. C. Kin, C. Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

70 Scopus citations

Abstract

Modifications are made to Fowler-Nordheim tunneling current analysis to model accurately the measured conduction characteristics of insulator layers thinner than 6 nm. The most significant is direct tunneling for which a closed-form expression is introduced. Polysilicon depletion and electron wave interference are also considered. 4 nm is found to a practical limit for SiO₂ scaling in VLSI applications due to direct tunneling leakage almost independent of power supply voltage.

Original language	English
Title of host publication	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	18-19
Number of pages	2
ISBN (Electronic)	0780306988
DOIs	https://doi.org/10.1109/VLSIT.1992.200622
State	Published - 1 Jan 1992
Event	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 - Seattle, United States Duration: 2 Jun 1992 → 4 Jun 1992

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	1992-June
ISSN (Print)	0743-1562

Conference

Conference	1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
Country	United States
City	Seattle
Period	2/06/92 → 4/06/92

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10.1109/VLSIT.1992.200622

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Schucgrqf, K. F., Kin, C. C., & Hu, C. (1992). Ultra-thin silicon dioxide leakage current and scaling limit. In 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 (pp. 18-19). [200622] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.1992.200622

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author = "Schucgrqf, {K. F.} and Kin, {C. C.} and C. Hu",

year = "1992",

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Schucgrqf, KF, Kin, CC & Hu, C 1992, Ultra-thin silicon dioxide leakage current and scaling limit. in 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992., 200622, Digest of Technical Papers - Symposium on VLSI Technology, vol. 1992-June, Institute of Electrical and Electronics Engineers Inc., pp. 18-19, 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992, Seattle, United States, 2/06/92. https://doi.org/10.1109/VLSIT.1992.200622

Ultra-thin silicon dioxide leakage current and scaling limit. / Schucgrqf, K. F.; Kin, C. C.; Hu, C.

1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 18-19 200622 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kin, C. C.

AU - Hu, C.

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N2 - Modifications are made to Fowler-Nordheim tunneling current analysis to model accurately the measured conduction characteristics of insulator layers thinner than 6 nm. The most significant is direct tunneling for which a closed-form expression is introduced. Polysilicon depletion and electron wave interference are also considered. 4 nm is found to a practical limit for SiO2 scaling in VLSI applications due to direct tunneling leakage almost independent of power supply voltage.

AB - Modifications are made to Fowler-Nordheim tunneling current analysis to model accurately the measured conduction characteristics of insulator layers thinner than 6 nm. The most significant is direct tunneling for which a closed-form expression is introduced. Polysilicon depletion and electron wave interference are also considered. 4 nm is found to a practical limit for SiO2 scaling in VLSI applications due to direct tunneling leakage almost independent of power supply voltage.

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PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 2 June 1992 through 4 June 1992

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Ultra-thin silicon dioxide leakage current and scaling limit

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