Ultra-thin silicon dioxide leakage current and scaling limit

K. F. Schucgrqf, C. C. Kin, C. Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

70 Scopus citations

Abstract

Modifications are made to Fowler-Nordheim tunneling current analysis to model accurately the measured conduction characteristics of insulator layers thinner than 6 nm. The most significant is direct tunneling for which a closed-form expression is introduced. Polysilicon depletion and electron wave interference are also considered. 4 nm is found to a practical limit for SiO2 scaling in VLSI applications due to direct tunneling leakage almost independent of power supply voltage.

Original languageEnglish
Title of host publication1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages18-19
Number of pages2
ISBN (Electronic)0780306988
DOIs
StatePublished - 1 Jan 1992
Event1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 - Seattle, United States
Duration: 2 Jun 19924 Jun 1992

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume1992-June
ISSN (Print)0743-1562

Conference

Conference1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
CountryUnited States
CitySeattle
Period2/06/924/06/92

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    Schucgrqf, K. F., Kin, C. C., & Hu, C. (1992). Ultra-thin silicon dioxide leakage current and scaling limit. In 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992 (pp. 18-19). [200622] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 1992-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.1992.200622