@inproceedings{d88a381ebc4549d99173cc0f3b17ab24,
title = "Ultra-thin silicon dioxide leakage current and scaling limit",
abstract = "Modifications are made to Fowler-Nordheim tunneling current analysis to model accurately the measured conduction characteristics of insulator layers thinner than 6 nm. The most significant is direct tunneling for which a closed-form expression is introduced. Polysilicon depletion and electron wave interference are also considered. 4 nm is found to a practical limit for SiO2 scaling in VLSI applications due to direct tunneling leakage almost independent of power supply voltage.",
author = "Schucgrqf, {K. F.} and Kin, {C. C.} and C. Hu",
year = "1992",
month = jan,
day = "1",
doi = "10.1109/VLSIT.1992.200622",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "18--19",
booktitle = "1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992",
address = "United States",
note = "null ; Conference date: 02-06-1992 Through 04-06-1992",
}