Ultra-Thin Silicon-Dioxide Breakdown Characteristics of MOS Devices with n+ and p+ Polysilicon Gates

S. Holland, I. C. Chen, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


In this work we investigate the effect of the gate material on the breakdown characteristics of ultra-thin silicon dioxide films at low voltages (< 6 V). When MOS capacitors are stressed with a positive gate voltage, the charge to breakdown and time to breakdown at a fixed oxide-voltage drop are significantly smaller in p + polysilicon-gate capacitors than in n+ polysilicon-gate capacitors. The results are interpreted in terms of a simple model of hole tunneling resulting from hot-hole generation in the anode by hot electrons entering from the silicon dioxide. Extrapolation of high-voltage-breakdown lifetime measurements for relatively thick-oxide devices to low voltages may be complicated by this mechanism.

Original languageEnglish
Pages (from-to)572-575
Number of pages4
JournalIEEE Electron Device Letters
Issue number12
StatePublished - 1 Jan 1987

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