Ultra-thin oxide with atomically smooth interfaces

Albert Chin*, W. J. Chen, R. H. Kao, B. C. Lin, T. Chang, C. Tsai, J. C.M. Huang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q BD , interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 angstroms. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.

Original languageEnglish
Pages177-181
Number of pages5
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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