Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto; H. S. Momose; S. Takagi; K. Yamabe; H. Iwai

doi:10.7567/ssdm.1990.c-8-3

Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto^*, H. S. Momose, S. Takagi, K. Yamabe, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low V_D and high V_G, most of the channel electrons tunnel into the gate, which reduces I_D. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

Original language	English
Pages	361-364
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.c-8-3
State	Published - 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 22 Aug 1990 → 24 Aug 1990

Conference

Conference	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	22/08/90 → 24/08/90

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@conference{af8cdf017f44409294a24cc56fe80120,

title = "Ultra thin nitride gate MISFET operating with tunneling gate current",

abstract = "The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.",

author = "T. Morimoto and Momose, {H. S.} and S. Takagi and K. Yamabe and H. Iwai",

year = "1990",

doi = "10.7567/ssdm.1990.c-8-3",

language = "English",

pages = "361--364",

note = "null ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - CONF

T1 - Ultra thin nitride gate MISFET operating with tunneling gate current

AU - Morimoto, T.

AU - Momose, H. S.

AU - Takagi, S.

AU - Yamabe, K.

AU - Iwai, H.

PY - 1990

Y1 - 1990

N2 - The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

AB - The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

UR - http://www.scopus.com/inward/record.url?scp=0025564109&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1990.c-8-3

DO - 10.7567/ssdm.1990.c-8-3

M3 - Paper

AN - SCOPUS:0025564109

SP - 361

EP - 364

Y2 - 22 August 1990 through 24 August 1990

ER -

Ultra thin nitride gate MISFET operating with tunneling gate current

Abstract

Conference

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