Ultra thin nitride gate MISFET operating with tunneling gate current

T. Morimoto*, H. S. Momose, S. Takagi, K. Yamabe, H. Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The electrical properties of ultra-thin nitride gates operating with large tunneling gate current have been demonstrated. Over all, drivability is very good. However, under low VD and high VG, most of the channel electrons tunnel into the gate, which reduces ID. In the cut-off bias region, band-to-band current between the drain and the substrate is significant.

Original languageEnglish
Pages361-364
Number of pages4
DOIs
StatePublished - 1990
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 22 Aug 199024 Aug 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period22/08/9024/08/90

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