Gate oxide thinning accompanied by the CMOS downsizing is expected to reach a direct-tunneling leakage current regime at the generations of 0.1 μm and below. This has been regarded as one of the limiting factor of CMOS progress in terms of performance. Recently, the studies of the direct-tunneling gate oxide have been carried out popularly and aggressively. In this paper, the results of these studies are reviewed and future prospects for the gate oxides are predicted.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 6 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 6 Dec 1998 → 9 Dec 1998