Ultra-small punchthrough MOSFET

B. M. Grossman*, Wei Hwang, F. F. Fang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes.

Original languageEnglish
Pages (from-to)1083-1090
Number of pages8
JournalSolid State Electronics
Issue number12
StatePublished - 1 Jan 1984

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