Ultra-small punchthrough MOSFET

B. M. Grossman*, Wei Hwang, F. F. Fang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A design for an ultra-small MOSFET is presented. MOSFETs with submicron channel lengths (L ≲ 0.25 μm) that operate with controlled punchthrough current are analyzed by two-dimensional numerical modeling. Current-voltage characteristics for subthreshold, nonsaturated and saturated regions of operation were obtained at various temperatures for devices of different channel length. The results indicate that device current is due to barrier-limited, space-charge-limited and surface-inversion conduction processes.

Original languageEnglish
Pages (from-to)1083-1090
Number of pages8
JournalSolid State Electronics
Volume27
Issue number12
DOIs
StatePublished - 1 Jan 1984

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