Ultra shallow P+/N junctions fabricated by plasma doping and all solid state laser annealing

Kazuo Tsutsui*, Yuichiro Sasaki, Cheng Guo Jin, Hideki Tamura, Buji Mizuno, Ryota Higaki, Takahisa Sato, Kenta Majima, Shun Ichiro Ohmi, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Ultra shallow junctions were formed by plasma doping of boron in n-Si and laser annealing (λ=0.53μm). In the doping process, a two-step doping method in which doping with low B2H6 gas concentration was followed by doping with high B2H6 gas concentration was proposed. It is pointed out that large optical absorption rate in the surface layer of as-doped sample was desirable to achieve shallow junction depth and low sheet resistance of the doped layer after laser annealing. The two-step doping method provided high dose and large optical absorption rate, so that the junction depth of 12-18 nm and sheet resistance of 346-588 Ω/sq. were obtained.

Original languageEnglish
Pages106-111
Number of pages6
StatePublished - 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: 10 May 200412 May 2004

Conference

ConferenceAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period10/05/0412/05/04

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