Ultra shallow p+/n junction formation by plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) with selective absorption modulation

C. G. Jin*, Y. Sasaki, K. Okashita, H. Tamura, H. Ito, B. Mizuno, K. Tsutsui, S. Ohmi, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Plasma doping (PD) and long pulse all solid-state laser annealing (ASLA) was combined with the selective absorption modulation using SiO2 layer to form ultra-shallow p+/n junction. By depositing a controlled thickness of SiO2 layer on top of the silicon substrate, we were able to confirm the reduction of laser energy density by 400 mJ/cm 2 (29%) and the formation of ultra-shallow junction at 12.7 nm (@1018 cm-3) with Rs of 670 Ω/sq., which demonstrated the high feasibility of this new method.

Keywords

  • All solid-state laser annealing
  • Plasma doping
  • Selective absorption modulation
  • SiO
  • Ultra shallow junction

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