Ultra-shallow junction formation by plasma doping and flash lamp annealing

K. Tsutsui*, Y. Sasaki, C. G. Jin, H. Sauddin, K. Majima, Y. Fukagawa, I. Aiba, H. Ito, B. Mizuno, K. Kakushima, P. Ahmet, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance. The pre-amolphization by He plasma treatment (He-PA process) played an important role for the successful formation or these junctions. Electrical properties were analyzed by not only sheet resistance but also Hall measurements and junction leakage measurement.

Original languageEnglish
Title of host publication14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
Pages39-46
Number of pages8
DOIs
StatePublished - 2006
Event14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 - Kyoto, Japan
Duration: 10 Oct 200613 Oct 2006

Publication series

Name14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Conference

Conference14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006
CountryJapan
CityKyoto
Period10/10/0613/10/06

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