Ultra-shallow buried-channel p-MOSFET with extremely high transconductance

T. Yoshitomi, M. Saito, H. Oguma*, Y. Akasaka, M. Ono, H. Nii, Y. Ushiku, H. Iwai, H. Hara

*Corresponding author for this work

Research output: Contribution to journalConference article

11 Scopus citations
Original languageEnglish
Article number760264
Pages (from-to)99-100
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1993
Event1993 13th Symposium on VLSI Technology, VLSIT 1993 - Kyoto, Japan
Duration: 17 May 199319 May 1993

Cite this