Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Yin Nien Chen; Ming Long Fan; Vita Pi Ho Hu; Pin Su; Ching Te Chuang

doi:10.1145/2627369.2627649

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Yin Nien Chen, Ming Long Fan, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, V_min and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation. Copyright

Original language	English
Title of host publication	ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	255-258
Number of pages	4
ISBN (Print)	9781450329750
DOIs	https://doi.org/10.1145/2627369.2627649
State	Published - 1 Jan 2014
Event	2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014 - San Diego, CA, United States Duration: 11 Aug 2014 → 13 Aug 2014

Publication series

Name	Proceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)	1533-4678

Conference

Conference	2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014
Country	United States
City	San Diego, CA
Period	11/08/14 → 13/08/14

Keywords

TFET SRAMs
Tunnel FET
Ultra-low power
Ultra-low voltage

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10.1145/2627369.2627649

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Chen, Y. N., Fan, M. L., Hu, V. P. H., Su, P., & Chuang, C. T. (2014). Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell. In ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design (pp. 255-258). (Proceedings of the International Symposium on Low Power Electronics and Design). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/2627369.2627649

Chen, Yin Nien ; Fan, Ming Long ; Hu, Vita Pi Ho ; Su, Pin ; Chuang, Ching Te. / Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell. ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 255-258 (Proceedings of the International Symposium on Low Power Electronics and Design).

@inproceedings{55278af039e54d86869b89ac86abeafe,

title = "Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell",

abstract = "In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, Vmin and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation. Copyright",

keywords = "TFET SRAMs, Tunnel FET, Ultra-low power, Ultra-low voltage",

author = "Chen, {Yin Nien} and Fan, {Ming Long} and Hu, {Vita Pi Ho} and Pin Su and Chuang, {Ching Te}",

year = "2014",

month = jan,

day = "1",

doi = "10.1145/2627369.2627649",

language = "English",

isbn = "9781450329750",

series = "Proceedings of the International Symposium on Low Power Electronics and Design",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "255--258",

booktitle = "ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design",

address = "United States",

note = "null ; Conference date: 11-08-2014 Through 13-08-2014",

}

Chen, YN, Fan, ML, Hu, VPH, Su, P & Chuang, CT 2014, Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell. in ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design. Proceedings of the International Symposium on Low Power Electronics and Design, Institute of Electrical and Electronics Engineers Inc., pp. 255-258, 2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014, San Diego, CA, United States, 11/08/14. https://doi.org/10.1145/2627369.2627649

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell. / Chen, Yin Nien; Fan, Ming Long; Hu, Vita Pi Ho; Su, Pin; Chuang, Ching Te.

ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc., 2014. p. 255-258 (Proceedings of the International Symposium on Low Power Electronics and Design).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

AU - Chen, Yin Nien

AU - Fan, Ming Long

AU - Hu, Vita Pi Ho

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2014/1/1

Y1 - 2014/1/1

N2 - In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, Vmin and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation. Copyright

AB - In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, Vmin and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation. Copyright

KW - TFET SRAMs

KW - Tunnel FET

KW - Ultra-low power

KW - Ultra-low voltage

UR - http://www.scopus.com/inward/record.url?scp=84906809238&partnerID=8YFLogxK

U2 - 10.1145/2627369.2627649

DO - 10.1145/2627369.2627649

M3 - Conference contribution

AN - SCOPUS:84906809238

SN - 9781450329750

T3 - Proceedings of the International Symposium on Low Power Electronics and Design

SP - 255

EP - 258

BT - ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 August 2014 through 13 August 2014

ER -

Chen YN, Fan ML, Hu VPH, Su P, Chuang CT. Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell. In ISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design. Institute of Electrical and Electronics Engineers Inc. 2014. p. 255-258. (Proceedings of the International Symposium on Low Power Electronics and Design). https://doi.org/10.1145/2627369.2627649

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

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