Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Yin Nien Chen, Ming Long Fan, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, Vmin and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation. Copyright

Original languageEnglish
Title of host publicationISLPED 2014 - Proceedings of the 2014 International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages255-258
Number of pages4
ISBN (Print)9781450329750
DOIs
StatePublished - 1 Jan 2014
Event2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014 - San Diego, CA, United States
Duration: 11 Aug 201413 Aug 2014

Publication series

NameProceedings of the International Symposium on Low Power Electronics and Design
ISSN (Print)1533-4678

Conference

Conference2014 ACM/IEEE International Symposium on Low Power Electronics and Design, ISLPED 2014
CountryUnited States
CitySan Diego, CA
Period11/08/1413/08/14

Keywords

  • TFET SRAMs
  • Tunnel FET
  • Ultra-low power
  • Ultra-low voltage

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