Ultra-low voltage and low power UWB CMOS LNA using forward body biases

Chih Shiang Chang, Jyh-Chyurn Guo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

An ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated using 0.18μm 1.8V CMOS technology. The adoption of forward body biases (FBB) in a 3-stage distributed amplifier enables an aggressive scaling of the supply voltages and gate input voltage to 0.6V. The low voltage feature from FBB leads to more than 50% power consumption saving to 4.2mW. The measured power gain (S 21 ) is higher than 10dB in 3.18.1GHz and noise figure is 2.834.7 dB in the wideband of 210GHz. Superior linearity is achieved with IIP3 as high as 4.2dBm and 12.5dBm at 6.5GHz and 10GHz respectively.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
Pages173-176
Number of pages4
DOIs
StatePublished - 9 Sep 2013
Event2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013 - Seattle, WA, United States
Duration: 2 Jun 20134 Jun 2013

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013
CountryUnited States
CitySeattle, WA
Period2/06/134/06/13

Keywords

  • FBB
  • LNA
  • Low power
  • Low voltage
  • UWB
  • linearity
  • noise figure

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