Daisuke Ueda*, Akio Shimano, Hiroki Nagasaki, Hiromitsu Takagi, Kazuyoshi Kitamura, Hideo Kawasaki, Masami Yokozawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


An original power MOSFET with extremely reduced on-resistance has been developed. The on-resistance per unit chip area been reduced to one quarter of that of the conventional power MOSFET. The new MOSFET has an outstanding structural feature in that it is provided with channels along the side-walls of the grooves which are formed in a rectangular shape. The device is called the 'RMOSFET', (Rectangular grooved MOSFET) because of this structure. The structure makes possible a remarkably high packing density, resulting in reduction of channel resistance and therefore reduction of on-resistance. Experimental RMOSFETs have a chip size of 3. 8mm square and a breakdown voltage of 50V. They exhibit an on-resistance of 13m OMEGA , which is the lowest value ever reported. Regarding the switching speed, the rise time and fall time are 50 nsec and 100 nsec respectively. The device is mounted on a TO-220 package and has a current-handling capacity of 40A.

Original languageEnglish
Pages (from-to)194-200
Number of pages7
JournalNational technical report
Issue number2
StatePublished - 1 Apr 1986

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