Ultra-low drift voltage by using gate voltage control in oxide-based gate ISFET

Kow-Ming Chang, K. Y. Chao, H. Y. Hsu, M. C. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this study, a simple and cheap way to solve the drift problem is presented which describes the relation of drift and gate voltage. Constant various gate voltages are biased in sensing layers with reference electrode. It obviously shows a strong relation of gate drifts and gate stress voltages. When the gate voltage is controlled as 0.5 V, the drift voltage of SiO 2 gate ISFET will decrease from 56.12 to 2.94 mV in ten hours measurement. The improvement of drift voltage reaches 94.8%. When the gate voltage is controlled as -1 V, the drift voltage of ZrO 2 gate ISFET will also decrease from - 57.94 to 0.76 mV. The improvement of drift voltage reaches 98.7%. This may result from the gate electric field affecting the ions to diffusive into the gate insulator. By this way, we can commercialize the ISFET with a very low drift rate in a simple way.

Original languageEnglish
Title of host publicationECS Transactions - Advance In-Situ Techniques for Analysis of Electrochemical Systems
Pages11-29
Number of pages19
Edition19
DOIs
StatePublished - 17 Nov 2008
EventAdvance In-Situ Techniques for Analysis of Electrochemical Systems - 211th ECS Meeting - Chicago, IL, United States
Duration: 6 May 200711 May 2007

Publication series

NameECS Transactions
Number19
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvance In-Situ Techniques for Analysis of Electrochemical Systems - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period6/05/0711/05/07

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