Ultra low-capacitance bond pad for RF applications in CMOS technology

Yuan W. Hsiao*, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A low-capacitance bond pad for gigahertz RF applications is proposed. Three kinds of on-chip inductors embedded under the traditional bond pad are used to compensate bond-pad capacitance. Experimental results have verified that bond-pad capacitance can be significantly reduced in a specific frequency band due to the cancellation effect provided by the embedded inductor in the proposed bond pad. The proposed bond pad is fully compatible to general CMOS processes without any process modification.

Original languageEnglish
Title of host publicationProceedings of the 2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
Pages303-306
Number of pages4
DOIs
StatePublished - 2 Oct 2007
Event2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007 - Honolulu, HI, United States
Duration: 3 Jun 20075 Jun 2007

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2007 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2007
CountryUnited States
CityHonolulu, HI
Period3/06/075/06/07

Keywords

  • Bond pad
  • Capacitance
  • Radio-frequency integrated circuit (RF IC)
  • Signal loss

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