An on-chip ultra-high-voltage charge pump circuit realized with the polysilicon diodes in the low-voltage bulk CMOS process is proposed in this work. Because the polysilicon diodes are fully isolated from the silicon substrate, the output voltage of the charge pump circuit is not limited by the junction breakdown voltage of MOSFETs. The polysilicon diodes can be implemented in the standard CMOS processes without extra process steps. The proposed ultra-high-voltage charge pump circuit has been fabricated in a 0.25-μm 2.5-V standard CMOS process. The output voltage of the four-stage charge pump circuit with 2.5-V power-supply voltage (VDD = 2.5 V) can be pumped up to 28.08 V, which is much higher than the n-well/p-substrate breakdown voltage (~18.9 V) in a 0.25-μm 2.5-V bulk CMOS process.
|Number of pages||5|
|Journal||IEEE Transactions on Circuits and Systems II: Express Briefs|
|State||Published - 1 Jan 2007|
- Charge pump circuit
- high-voltage generator
- polysilicon diode