ULSI-quality gate oxide on thin-film-silicon-on-insulator

W. M. Huang*, Z. J. Ma, M. Racanelli, D. Hughes, S. Ajuria, G. Huffman, T. P. Ong, P. K. Ko, Chen-Ming Hu, B. Y. Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Gate oxide quality for sub-0.5μm applications on Thin-film-Silicon-On-Insulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk. However, increased surface micro-roughness on SOI materials leads to a higher thermal oxide defect density relative to that of bulk silicon. The use of wafer polish or stacked thermal/LPCVD oxide is found to be effective in achieving bulk-quality oxide defect densities on TFSOI while maintaining intrinsic I-V, QBD and charge trapping properties.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages735-738
Number of pages4
ISBN (Print)0780314506
DOIs
StatePublished - 1 Dec 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: 5 Dec 19938 Dec 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Conference

ConferenceProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period5/12/938/12/93

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    Huang, W. M., Ma, Z. J., Racanelli, M., Hughes, D., Ajuria, S., Huffman, G., Ong, T. P., Ko, P. K., Hu, C-M., & Hwang, B. Y. (1993). ULSI-quality gate oxide on thin-film-silicon-on-insulator. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 735-738). (Technical Digest - International Electron Devices Meeting). Publ by IEEE. https://doi.org/10.1109/IEDM.1993.347208