U-band pHEMT divide-by-three ILFD

Wei Ling Chang, Chin-Chun Meng, Kuan Chang Tsung, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A fully integrated 0.15-μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating substrate. The divide-by-three ILFD performs a locking range from 44 GHz to 47 GHz at the supply voltage of 6 V and the core current consumption is 6.24 mA.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015
Subtitle of host publication"Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 10th European Microwave Integrated Circuits Conference Proceedings, EuMIC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages13-16
Number of pages4
ISBN (Electronic)9782874870408
DOIs
StatePublished - 2 Dec 2015
Event10th European Microwave Integrated Circuits Conference, EuMIC 2015 - Paris, France
Duration: 7 Sep 20158 Sep 2015

Publication series

NameEuropean Microwave Week 2015:

Conference

Conference10th European Microwave Integrated Circuits Conference, EuMIC 2015
CountryFrance
CityParis
Period7/09/158/09/15

Keywords

  • AlGaAs/InGaAs pHEMT
  • Divide-by-three injection locked frequency divider
  • Marchand Balun

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