Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

C. S. Yang, C. C. Cheng, M. C. Kuo, P. Y. Tseng, J. L. Shen, J. Lee, Wu-Ching Chou*, S. Jeng, C. Y. Lai, T. M. Hsu, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

Original languageEnglish
Pages (from-to)243-247
Number of pages5
JournalThin Solid Films
Volume429
Issue number1-2
DOIs
StatePublished - 1 May 2003

Keywords

  • Band structure
  • Molecular beam epitaxy
  • Photon emission
  • Transmission electron microscopy

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    Yang, C. S., Cheng, C. C., Kuo, M. C., Tseng, P. Y., Shen, J. L., Lee, J., Chou, W-C., Jeng, S., Lai, C. Y., Hsu, T. M., & Chyi, J. I. (2003). Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells. Thin Solid Films, 429(1-2), 243-247. https://doi.org/10.1016/S0040-6090(02)01112-4