Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications

Weiguo Hu, Mohd Erman Fauzi, Makoto Igarashi, Akio Higo, Ming Yi Lee, Yiming Li, Noritaka Usami, Seiji Samukawa*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1021-1023
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 1 Jan 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/06/1321/06/13

Keywords

  • Amorphous materials
  • Photovoltaic cells
  • Quantum dot
  • Silicon

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