Two-way current-combining W-band power amplifier in 65-nm CMOS

Qun Jane Gu*, Zhiwei Xu, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

65 Scopus citations

Abstract

This paper presents a two-way current-combining-based W-band power amplifier (PA) in 65-nm CMOS technology. An analytical model and design method for W-band power combiners are presented, which indicates current combining is preferred for millimeter-wave frequencies due to a good current handling capability, symmetrical design, and low sensitivity to parasitics. To demonstrate the concept, a two-way current-combining-based PA has been fabricated, where each channel utilizes compact and symmetrical transformer-based inter-stage coupling to realize a preferred fully differential implementation. This PA operates from 101 to 117 GHz with maximum power gain of 14.1 dB, saturated output power (P sat) of 14.8 dBm, and peak power-added efficiency of 9.4%. The core chip area without pads is 0.106 mm 2.

Original languageEnglish
Article number6166363
Pages (from-to)1365-1374
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume60
Issue number5
DOIs
StatePublished - 12 Mar 2012

Keywords

  • Power amplifier (PA)
  • power combiner
  • W-band

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