Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) input and output protections in nanometer technologies

Jian Hsing Lee, Yi Hsun Wu, Shao Chang Huang*, Yu Huei Lee, Ke-Horng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In this paper, a two-stage trigger (TST) scheme is proposed to implement a low-capacitance and zero-ohm input resistance electrostatic-discharge (ESD) protection device for nanometer technology applications. Besides the main trigger device diode string, the output transistor can also be used as the trigger device. The dimension of the main trigger device can be reduced for minimizing its capacitance with the additional trigger device. Moreover, the output transistor can be as the driving device without any series resistor. This is because the diode string can help to prevent integrated circuits (ICs) from ESD damage before the primary ESD protection device turns on.

Original languageEnglish
Pages (from-to)134-141
Number of pages8
JournalSolid-State Electronics
Volume74
DOIs
StatePublished - 1 Aug 2012

Keywords

  • DTSCR
  • ESD
  • SSP
  • TLP
  • TSDS
  • TST
  • V

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