TY - GEN
T1 - Two-stage trigger silicon-controller rectifier (SCR) for radio-frequency (RF) ESD protection in the nanometer technologies
AU - Lee, Jian Hsing
AU - Wu, Yi Hsun
AU - Huang, Shao Chang
AU - Lee, Yu Huei
AU - Chen, Ke-Horng
PY - 2011/12/12
Y1 - 2011/12/12
N2 - In this paper, a two-stage trigger (TST) scheme is proposed to implement a low-capacitance and zero-ohm input resistance electrostatic-discharge (ESD) protection device for nanometer technologies. This scheme includes two different kinds of trigger devices. The diode string is the first trigger device, which provides the substrate current to trigger the output transistor on. As the output transistor is turned on, the source begins to inject the electrons. Thus, some of the electrons are collected to the anode of the silicon-controller rectifier (SCR) for driving it into the latch-up state. With the additional trigger device, the dimension of the main trigger device can be reduced to minimize its capacitance. Moreover, the output transistor can connect to the pad directly without any resistor since the diode string can be turned on before the output transistor is turned on.
AB - In this paper, a two-stage trigger (TST) scheme is proposed to implement a low-capacitance and zero-ohm input resistance electrostatic-discharge (ESD) protection device for nanometer technologies. This scheme includes two different kinds of trigger devices. The diode string is the first trigger device, which provides the substrate current to trigger the output transistor on. As the output transistor is turned on, the source begins to inject the electrons. Thus, some of the electrons are collected to the anode of the silicon-controller rectifier (SCR) for driving it into the latch-up state. With the additional trigger device, the dimension of the main trigger device can be reduced to minimize its capacitance. Moreover, the output transistor can connect to the pad directly without any resistor since the diode string can be turned on before the output transistor is turned on.
UR - http://www.scopus.com/inward/record.url?scp=82955188196&partnerID=8YFLogxK
U2 - 10.1109/ESSDERC.2011.6044155
DO - 10.1109/ESSDERC.2011.6044155
M3 - Conference contribution
AN - SCOPUS:82955188196
SN - 9781457707056
T3 - European Solid-State Device Research Conference
SP - 379
EP - 382
BT - ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Y2 - 12 September 2011 through 16 September 2011
ER -