Two new generalized equations for minority-carrier transport in bipolar transistors with heavily doped base and non-uniform band structure

Kow-Ming Chang*, Jung Yu Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Two new, simple, general and rigorous closed-form integral solutions to the base current density and to the base transit time for electron transport in NPN bipolar transistors with heavily doped base and non-uniform band structure are presented. The expressions include the effects of non-uniform band structure, the influence of Fermi-Dirac statistics, the position-dependent mobility and the velocity saturation effect at the base-collector depletion-layer edge on the base side. An application of this new simplified base current density of equation to Early voltage in a narrow-base bipolar transistor is illustrated. A simple example for the effects of the minority-carrier density and of the base built-in field on the minority-carrier base transit time is also qualitatively discussed.

Original languageEnglish
Article number011
Pages (from-to)799-803
Number of pages5
JournalSemiconductor Science and Technology
Volume7
Issue number6
DOIs
StatePublished - 1 Dec 1992

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