TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

Hiroshi Iwai*, Kenji Taniguchi, Masami Konaka, Satoshi Maeda, Yoshio Nishi

*Corresponding author for this work

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.

Original languageEnglish
Pages (from-to)728-731
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1980
EventTech Dig Int Electron Devices Meet - Washington, DC, USA
Duration: 8 Dec 198010 Dec 1980

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