Two-dimensional arsenic precipitation by in delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs

T. M. Cheng*, C. Y. Chang, Albert Chin, M. F. Huang, J. H. Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900°C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al 0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.

Original languageEnglish
Pages (from-to)2517-2519
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number19
DOIs
StatePublished - 1 Dec 1994

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