Two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells

K. L. Tsai*, K. H. Chang, C. P. Lee, Kai-Feng Huang, J. S. Tsang, H. R. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

A two-color infrared detector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 μm, and that of the InGaAs/AlGaAs quantum well is at 5.3 μm. The responsivity of the detector is 1 A/W at 8 μm and 0.27 A/W at 5.3 μm; these are the best values reported for a two-color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3-5.3 μm and 7.5-14 μm. Single-colored 5.3 and 8 μm QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.

Original languageEnglish
Pages (from-to)3504-3506
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number26
DOIs
StatePublished - 1 Dec 1993

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