Two-channel Kondo effects in Al/ AlOx /Sc planar tunnel junctions

Sheng-Shiuan Yeh*, Juhn-Jong Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We have measured the differential conductances G (V,T) in several Al/ AlOx /Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to ∼16̃K, the zero-bias conductance G (0,T) crosses over from a standard -lnT dependence to a novel -T dependence. Correspondingly, the finite bias conductance G (V,T) reveals a two-channel Kondo scaling behavior between ∼4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin- 1 2 Sc atoms situated slightly inside the AlOx /Sc interface.

Original languageEnglish
Article number012411
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number1
DOIs
StatePublished - 5 Jan 2009

Fingerprint Dive into the research topics of 'Two-channel Kondo effects in Al/ AlOx /Sc planar tunnel junctions'. Together they form a unique fingerprint.

Cite this